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» A Statistical Model for Electromigration Failures
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ISQED
2000
IEEE
80views Hardware» more  ISQED 2000»
13 years 9 months ago
A Statistical Model for Electromigration Failures
The lognormal has been traditionally used to model the failure time distribution of electromigration failures. However, when used to estimate the failure of large metal layers, it...
Gilbert Yoh, Farid N. Najm
DFT
2007
IEEE
112views VLSI» more  DFT 2007»
13 years 11 months ago
Estimation of Electromigration-Aggravating Narrow Interconnects Using a Layout Sensitivity Model
During semiconductor manufacturing, particles undesirably depose on the surface of the wafer causing “open” and “short” defects to interconnects. In this paper, a third ty...
Rani S. Ghaida, Payman Zarkesh-Ha
DFT
2004
IEEE
92views VLSI» more  DFT 2004»
13 years 8 months ago
Reliability and Yield: A Joint Defect-Oriented Approach
We present a model for computing the probability of a parametric failure due to a spot defect. The analysis is based on electromigration in conductors under unidirectional current...
Roman Barsky, Israel A. Wagner
ANSS
2007
IEEE
13 years 11 months ago
Failure Prediction in Computational Grids
Accurate failure prediction in Grids is critical for reasoning about QoS guarantees such as job completion time and availability. Statistical methods can be used but they suffer f...
Woochul Kang, Andrew S. Grimshaw
ASPDAC
2007
ACM
122views Hardware» more  ASPDAC 2007»
13 years 9 months ago
Predicting the Performance and Reliability of Carbon Nanotube Bundles for On-Chip Interconnect
Single-walled carbon nanotube (SWCNT) bundles have the potential to provide an attractive solution for the resistivity and electromigration problems faced by traditional copper int...
Arthur Nieuwoudt, Mosin Mondal, Yehia Massoud