13 search results - page 1 / 3 » A unified non-rectangular device and circuit simulation mode... |
ICCAD
2006
IEEE
14 years 1 months ago
2006
IEEE
— For 65nm and below devices, even after optical proximity correction (OPC), the gate may still be non-rectangular. There are several limited works on the device and circuit char...
DATE
2008
IEEE
13 years 11 months ago
2008
IEEE
Single-electron devices have drawn much attention in the last two decades. They have been widely used for device research and also show promise as a potential alternative to compl...
DAC
2000
ACM
13 years 9 months ago
2000
ACM
The decrease in feature size and added chip functionality in large sub-micron integrated circuits demand larger grids for power distribution. Since power grids are performance lim...
ISQED
2005
IEEE
13 years 10 months ago
2005
IEEE
The purpose of the paper is to introduce a new failure rate-based methodology for reliability simulation of deep submicron CMOS integrated circuits. Firstly, two of the state-of-t...
DAC
2005
ACM
14 years 5 months ago
2005
ACM
Device optimization considering supply voltage Vdd and threshold voltage Vt tuning does not increase chip area but has a great impact on power and performance in the nanometer tec...