In this paper, a novel low-power design technique is proposed to minimize the standby leakage power in nanoscale CMOS very large scale integration (VLSI) systems by generating the ...
In this paper we present two polynomial time-complexity heuristic algorithms for optimization of gate-oxide leakage (tunneling current) during behavioral synthesis through simulta...
Saraju P. Mohanty, Elias Kougianos, Ramakrishna Ve...
In this paper dual-K (DKCMOS) technology is proposed as a method for gate leakage power reduction. An integer linear programming (ILP) based algorithm is proposed for its optimiza...
In nanometer scaled CMOS devices significant increase in the subthreshold, the gate and the reverse biased junction band-toband-tunneling (BTBT) leakage, results in the large incr...
— Scaling of CMOS technologies has led to dramatic increase in sub-threshold, gate and reverse biased junction band-to-band-tunneling (BTBT) leakage. Leakage current has now beco...