49 search results - page 1 / 10 » Design and Simulation of Asymmetric MOSFETs |
IEICET
2007
13 years 4 months ago
2007
ISQED
2005
IEEE
13 years 10 months ago
2005
IEEE
Double-Gate (DG) transistor has emerged as the most promising device for nano-scale circuit design. Independent control of front and back gate in DG devices can be effectively use...
ISLPED
2009
ACM
13 years 11 months ago
2009
ACM
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
SBCCI
2004
ACM
13 years 10 months ago
2004
ACM
This paper presents a design methodology for RF CMOS Low Noise Amplifiers (LNA). This methodology uses a current–based MOSFET model, which allows a detailed analysis of an LNA f...
VLSID
2010
IEEE
13 years 8 months ago
2010
IEEE
—We propose a compact model for small signal non quasi static analysis of long channel symmetric double gate MOSFET. The model is based on the EKV formalism and is valid in all r...