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JCP
2008
141views more  JCP 2008»
13 years 5 months ago
Leakage Controlled Read Stable Static Random Access Memories
Semiconductor manufacturing process scaling increases leakage and transistor variations, both of which are problematic for static random access memory (SRAM). Since SRAM is a criti...
Sayeed A. Badrudduza, Ziyan Wang, Giby Samson, Law...
DFT
2004
IEEE
101views VLSI» more  DFT 2004»
13 years 9 months ago
Designs for Reducing Test Time of Distributed Small Embedded SRAMs
This paper proposes a test architecture aimed at reducing test time of distributed small embedded SRAMs (eSRAMs). This architecture improves the one proposed in [4, 5]. The improv...
Baosheng Wang, Yuejian Wu, André Ivanov
ETS
2010
IEEE
153views Hardware» more  ETS 2010»
13 years 3 months ago
Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes
ÑIn this paper, we present a comparative study on the effects of resistive-bridging defects in the SRAM core-cells, considering different technology nodes. In particular, we analy...
Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio,...
ISLPED
2010
ACM
229views Hardware» more  ISLPED 2010»
13 years 5 months ago
An energy efficient cache design using spin torque transfer (STT) RAM
The on-chip memory is a dominant source of power and energy consumption in modern and future processors. This paper explores the use of a new emerging non-volatile memory technolo...
Mitchelle Rasquinha, Dhruv Choudhary, Subho Chatte...
ISQED
2010
IEEE
170views Hardware» more  ISQED 2010»
13 years 7 months ago
New SRAM design using body bias technique for ultra low power applications
A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering ...
Farshad Moradi, Dag T. Wisland, Hamid Mahmoodi, Yn...