14 search results - page 3 / 3 » From transistors to MEMS: Throughput-aware power gating in C... |
GLVLSI
2003
IEEE
13 years 10 months ago
2003
IEEE
With scaling down to deep submicron and nanometer technologies, noise immunity is becoming a metric of the same importance as power, speed, and area. Smaller feature sizes, low vo...
TVLSI
2008
13 years 4 months ago
2008
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
ICCAD
2003
IEEE
14 years 1 months ago
2003
IEEE
Transient Signal Analysis (TSA) is a parametric device testing technique based on the analysis of dynamic (transient) current (iDDT) drawn by the core logic from the power supply ...
ISCAS
2006
IEEE
13 years 10 months ago
2006
IEEE
Abstract— We present a simple silicon circuit for modelling voltagedependent ion channels found within neural cells, capturing both the gating particle’s sigmoidal activation (...