In this paper we propose a novel integrated circuit and architectural level technique to reduce leakage power consumption in high performance cache memories using single Vt (trans...
This paper presents the design and evaluation of a new SRAM cell made of nine transistors (9T). The proposed 9T cell utilizes a scheme with separate read and write wordlines; it i...
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
Ubiquitous computing has become a very popular paradigm. The most suitable technological solution for those systems consists of using hybrid processors able to operate at high vol...
Bojan Maric, Jaume Abella, Francisco J. Cazorla, M...
Extreme technology integration in the sub-micron regime comes with a rapid rise in heat dissipation and power density for modern processors. Dynamic voltage scaling is a widely us...
Amin Ansari, Shuguang Feng, Shantanu Gupta, Scott ...