Negative bias temperature instability (NBTI) has come to the forefront of critical reliability phenomena in advanced CMOS technology. In this paper, we propose a fast and accurate...
Hong Luo, Yu Wang 0002, Ku He, Rong Luo, Huazhong ...
Negative bias temperature instability (NBTI) has become the dominant reliability concern for nanoscale PMOS transistors. In this paper, a predictive model is developed for the deg...
With the CMOS transistors being scaled to sub 45nm and lower, Negative Bias Temperature Instability (NBTI) has become a major concern due to its impact on PMOS transistor aging pr...
Negative Bias Temperature Instability (NBTI) has been identified as a major and critical reliability issue for PMOS devices in nano-scale designs. It manifests as a negative thres...
Kewal K. Saluja, Shriram Vijayakumar, Warin Sootka...
—As device feature size continues to shrink, reliability becomes a severe issue due to process variation, particle-induced transient errors, and transistor wear-out/stress such a...
Jin Sun, Avinash Karanth Kodi, Ahmed Louri, Janet ...