In modern IC design, the number of long on-chip wires has been growing rapidly because of the increasing circuit complexity. Interconnect delay has dominated over gate delay as te...
Jill H. Y. Law, Evangeline F. Y. Young, Royce L. S...
Individual dies in 3D integrated circuits are connected using throughsilicon-vias (TSVs). TSVs not only increase manufacturing cost, but also incur silicon area, delay, and power ...
Abstract—Modeling parasitic parameters of Through-SiliconVia (TSV) structures is essential in exploring electrical characteristics such as delay and signal integrity (SI) of circ...
Roshan Weerasekera, Matt Grange, Dinesh Pamunuwa, ...
Most previous 3D IC research focused on “stacking” traditional 2D silicon layers, so the interconnect reduction is limited to interblock delays. In this paper, we propose tech...
Yongxiang Liu, Yuchun Ma, Eren Kursun, Glenn Reinm...
3-D monolithic integration (3DMI), also termed as sequential integration, is a potential technology for future gigascale circuits. Since the device layers are processed in sequent...