19 search results - page 4 / 4 » MOSFET modeling for RF-CMOS design |
ICCAD
2007
IEEE
14 years 2 months ago
2007
IEEE
Modern processing technologies offer a number of types of devices such as high-VT , low-VT , thick-oxide, etc. in addition to the nominal transistor in order to meet system perfor...
ISQED
2005
IEEE
13 years 11 months ago
2005
IEEE
The purpose of the paper is to introduce a new failure rate-based methodology for reliability simulation of deep submicron CMOS integrated circuits. Firstly, two of the state-of-t...
ICCAD
2006
IEEE
14 years 2 months ago
2006
IEEE
In this work we propose a methodology to self-consistently solve leakage power with temperature to predict thermal runaway. We target 28nm FinFET based circuits as they are more p...
DAC
2007
ACM
14 years 6 months ago
2007
ACM
Negative bias temperature instability (NBTI) in MOSFETs is one of the major reliability challenges in nano-scale technology. This paper presents an efficient technique to characte...