11 search results - page 2 / 3 » Modeling of Ballistic Carbon Nanotube Field Effect Transisto... |
DAC
2008
ACM
13 years 6 months ago
2008
ACM
Recently, it was demonstrated that the polarity of carbon nanotube field effect transistors can be electrically controlled. In this paper we show how Programmable Logic Arrays (PL...
DAC
2008
ACM
14 years 5 months ago
2008
ACM
Intrinsic and parasitic capacitances play an important role in determining the high?frequency RF performance of devices. Recently, a new type of carbon nanotube field effect trans...
DATE
2008
IEEE
13 years 11 months ago
2008
IEEE
Metallic Carbon Nanotubes (CNTs) create source-drain shorts in Carbon Nanotube Field Effect Transistors (CNFETs), causing excessive leakage, degraded noise margin and delay variat...
DATE
2009
IEEE
13 years 11 months ago
2009
IEEE
– The quest for technologies with superior device characteristics has showcased Carbon Nanotube Field Effect Transistors (CNFETs) into limelight. Among the several design aspects...
GLVLSI
2010
IEEE
13 years 9 months ago
2010
IEEE
This paper investigates read-out schemes for a crossbar memory using CNTFET-based elements as cross-points. Two read-out schemes are presented in this paper; the first scheme bias...