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ISQED
2006
IEEE
107views Hardware» more  ISQED 2006»
13 years 10 months ago
Impact of Gate-Length Biasing on Threshold-Voltage Selection
Gate-length biasing is a runtime leakage reduction technique that leverages on the short-channel effect by marginally increasing the gate-length of MOS devices to significantly ...
Andrew B. Kahng, Swamy Muddu, Puneet Sharma
DAC
2004
ACM
14 years 5 months ago
Selective gate-length biasing for cost-effective runtime leakage control
With process scaling, leakage power reduction has become one of the most important design concerns. Multi-threshold techniques have been used to reduce runtime leakage power witho...
Puneet Gupta, Andrew B. Kahng, Puneet Sharma, Denn...
ICCAD
2006
IEEE
127views Hardware» more  ICCAD 2006»
14 years 1 months ago
Joint design-time and post-silicon minimization of parametric yield loss using adjustable robust optimization
Parametric yield loss due to variability can be effectively reduced by both design-time optimization strategies and by adjusting circuit parameters to the realizations of variable...
Murari Mani, Ashish Kumar Singh, Michael Orshansky
DATE
2009
IEEE
135views Hardware» more  DATE 2009»
13 years 11 months ago
Gate replacement techniques for simultaneous leakage and aging optimization
—1As technology scales, the aging effect caused by Negative Bias Temperature Instability (NBTI) has become a major reliability concern for circuit designers. On the other hand, r...
Yu Wang 0002, Xiaoming Chen, Wenping Wang, Yu Cao,...