-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
FinFET devices promise to replace traditional MOSFETs because of superior ability in controlling leakage and minimizing short channel effects while delivering a strong drive curre...
— Clock-gating and power-gating have proven to be very effective solutions for reducing dynamic and static power, respectively. The two techniques may be coupled in such a way th...
Leticia Maria Veiras Bolzani, Andrea Calimera, Alb...