65 search results - page 2 / 13 » Storage coding for wear leveling in flash memories |
MICRO
2009
IEEE
13 years 11 months ago
2009
IEEE
Phase Change Memory (PCM) is an emerging memory technology that can increase main memory capacity in a cost-effective and power-efficient manner. However, PCM cells can endure on...
ISCAS
2006
IEEE
13 years 10 months ago
2006
IEEE
This paper presents a multilevel (ML) Flash memory onchip error correction system design based on the concept of trellis coded modulation (TCM). This is motivated by the non-trivi...
DAC
2009
ACM
14 years 5 months ago
2009
ACM
The use of Flash memories in portable embedded systems is ever increasing. This is because of the multi-level storage capability that makes them excellent candidates for high dens...
DATE
2009
IEEE
13 years 11 months ago
2009
IEEE
NAND Flash Memories require Garbage Collection (GC) and Wear Leveling (WL) operations to be carried out by Flash Translation Layers (FTLs) that oversee flash management. Owing to ...
ICCD
2003
IEEE
14 years 1 months ago
2003
IEEE
NAND flash memory has become an indispensable component in embedded systems because of its versatile features such as non-volatility, solid-state reliability, low cos,t and high d...