7 search results - page 1 / 2 » System-Level SRAM Yield Enhancement |
ISQED
2006
IEEE
13 years 10 months ago
2006
IEEE
It is well known that SRAM constitutes a large portion of modern integrated circuits, with 80% or more of the total transistors being dedicated to SRAM in a typical processor or S...
ATS
2005
IEEE
13 years 10 months ago
2005
IEEE
In this paper, we develop a method to analyze the probability of access failure in SRAM array (due to random Vt variation in transistors) by jointly considering variations in cell...
ICCAD
2004
IEEE
14 years 1 months ago
2004
IEEE
In this paper, we have analyzed ond modeled the fiilure probabilities ofSRAM cells due to process parameter variations. A method to predict the yield of a memoiy chip based on the...
DAC
2008
ACM
14 years 5 months ago
2008
ACM
: Spin-Torque Transfer Magnetic RAM (STT MRAM) is a promising candidate for future universal memory. It combines the desirable attributes of current memory technologies such as SRA...
TVLSI
2010
12 years 11 months ago
2010
Process-induced variations and sub-threshold leakage in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve ...