Process related variations are considered a major concern in emerging sub-65nm technologies. In this paper, we investigate the impact of process variations on different types of c...
Gain cell embedded DRAMs are twice as dense as 6T SRAMs, are logic compatible, have decoupled read and write paths providing good low voltage margin, and can drive long bitlines w...
— Several design metrics have been used in the past to evaluate the SRAM cell stability. However, most of them fail to provide the exact stability figures as shown in this paper...
Jawar Singh, Jimson Mathew, Dhiraj K. Pradhan, Sar...
- Exceptionally leaky transistors are increasingly more frequent in nano-scale technologies due to lower threshold voltage and its increased variation. Such leaky transistors may e...
Abstract--To achieve a high product quality for nano-scale systems both realistic defect mechanisms and process variations must be taken into account. While existing approaches for...