ISQED
2010
IEEE
13 years 3 months ago
2010
IEEE
Low power, minimum transistor count and fast access static random access memory (SRAM) is essential for embedded multimedia and communication applications realized using system on...
ISQED
2010
IEEE
13 years 6 months ago
2010
IEEE
A new SRAM design is proposed. Body biasing improves the static noise margin (SNM) improved by at least 15% compared to the standard cells. Through using this technique, lowering ...
VLSID
2010
IEEE
13 years 8 months ago
2010
IEEE
A novel design approach for simultaneous power and stability (static noise margin, SNM) optimization of nanoCMOS static random access memory (SRAM) is presented. A 45nm single-end...
VLSID
2004
IEEE
14 years 5 months ago
2004
IEEE
Dynamic noise analysis is greatly needed in place of traditional static noise analysis due to the ever increasingly stringent design requirement for VLSI chips based on very deep ...
VLSID
2007
IEEE
14 years 5 months ago
2007
IEEE
Device scaling such as reduced oxide thickness and high electric field has given rise to various reliability concerns. One such growing issue of concern is the degradation of PMOS...
VLSID
2009
IEEE
14 years 5 months ago
2009
IEEE
Abstract-- Single-ended static random access memory (SESRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a ...