Integrated Current Sensing Device for Micro IDDQ Test

A current sensing device, namely Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement, which can be used for IDDQ testing of internal circuit blocks. The HEMOS can be manufactured and integrated in a VLSI with the conventional CMOS process. The HEMOS is also helpful to establish the low standby current by identifying the locations of large standby power consumption (possibly a design fault) using only a few pads.

• Type: Conference
• Year: 1998
• Where: ATS
• Authors: Koichi Nose, Takayasu Sakurai
• Keywords: ATS 1998, Current Sensing Device, Hall Effect MOSFET, Hardware, Non-disturbing Current Measurement