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116
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ATS
1998
IEEE
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ATS 1998
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Integrated Current Sensing Device for Micro IDDQ Test
15 years 7 months ago
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lowpower.iis.u-tokyo.ac.jp
A current sensing device, namely Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement...
Koichi Nose, Takayasu Sakurai
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