70 search results - page 3 / 14 » Enhanced leakage reduction Technique by gate replacement |
VLSID
2002
IEEE
14 years 6 months ago
2002
IEEE
While some leakage power reduction techniques require modification of process technology achieving savings at the fabrication stage, others are based on circuit-level optimization...
ISLPED
2005
ACM
13 years 12 months ago
2005
ACM
Leakage power is one of the most critical issues for ultra-deep submicron technology. Subthreshold leakage depends exponentially on linewidth, and consequently variation in linewi...
VLSID
2006
IEEE
14 years 6 months ago
2006
IEEE
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...
ICCD
2004
IEEE
14 years 3 months ago
2004
IEEE
Gate oxide tunneling current (Igate) is emerging as a key roadblock for device scaling in nanometer-scale CMOS circuits. A practical means to reduce Igate is to leverage dual Tox ...
TIM
2010
13 years 1 months ago
2010
In this paper, a novel low-power design technique is proposed to minimize the standby leakage power in nanoscale CMOS very large scale integration (VLSI) systems by generating the ...