A current sensing device, namely Hall Effect MOSFET (HEMOS) is proposed. It is experimentally shown that the HEMOS enables a non-contacting, and non-disturbing current measurement...
As integrated circuits are scaled down it becomes difficult to maintain uniformity in process parameters across each individual die. The resulting performance variation requires ...
N. Pete Sedcole, Justin S. Wong, Peter Y. K. Cheun...
Research in floorplanning and block-packing has generated a variety of data structures to represent spatial configurations of circuit modules. Much of this work focuses on the g...
Designers aim at fast but low-power consuming integrated circuits. Since high processing speed always comes with high energy demands, the literature provides several ways to reduc...
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, ...