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MJ
2006
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MJ 2006
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Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering
15 years 3 months ago
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Surface relief formed by nanoimprinting and etching into a thermally grown SiO2 layer on Si was used to position the initial nuclei formed by chemically vapor deposited Si and Ge....
T. I. Kamins, A. A. Yasseri, S. Sharma, R. F. W. P...
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