Sciweavers

Share
TVLSI
2008

Data Memory Subsystem Resilient to Process Variations

8 years 3 months ago
Data Memory Subsystem Resilient to Process Variations
As technology scales, more sophisticated fabrication processes cause variations in many different parameters in the device. These variations could severely affect the performance of processors by making the latency of circuits less predictable and thus requiring conservative design approaches. In this paper, we use Monte Carlo simulations in addition to worst-case circuit analysis to establish the overall delay due to process variations in a data cache sub-system under both typical and worst-case conditions. The distribution of the cache critical-path-delay in the typical scenario was determined by performing Monte Carlo simulations at different supply voltages, threshold voltages, and transistor lengths on a complete cache design. In addition to establishing the delay variation, we present an adaptive variable-cycle-latency cache architecture that mitigates the impact of process variations on access latency by closely following the typical latency behavior rather than assuming a conse...
M. Bennaser, Yao Guo, Csaba Andras Moritz
Added 29 Dec 2010
Updated 29 Dec 2010
Type Journal
Year 2008
Where TVLSI
Authors M. Bennaser, Yao Guo, Csaba Andras Moritz
Comments (0)
books