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» A variation tolerant subthreshold design approach
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TVLSI
2010
13 years 23 days ago
SRAM Read/Write Margin Enhancements Using FinFETs
Process-induced variations and sub-threshold leakage in bulk-Si technology limit the scaling of SRAM into sub-32 nm nodes. New device architectures are being considered to improve ...
Andrew Carlson, Zheng Guo, Sriram Balasubramanian,...
PATMOS
2007
Springer
14 years 6 days ago
A Statistical Approach to the Timing-Yield Optimization of Pipeline Circuits
Abstract. The continuous miniaturization of semiconductor devices imposes serious threats to design robustness against process variations and environmental fluctuations. Modern ci...
Chin-Hsiung Hsu, Szu-Jui Chou, Jie-Hong Roland Jia...
TIM
2010
294views Education» more  TIM 2010»
13 years 24 days ago
Standby Leakage Power Reduction Technique for Nanoscale CMOS VLSI Systems
In this paper, a novel low-power design technique is proposed to minimize the standby leakage power in nanoscale CMOS very large scale integration (VLSI) systems by generating the ...
HeungJun Jeon, Yong-Bin Kim, Minsu Choi
ACSD
2009
IEEE
100views Hardware» more  ACSD 2009»
14 years 27 days ago
Scheduling Synchronous Elastic Designs
Asynchronous and latency-insensitive circuits offer a similar form of elasticity that tolerates variations in the delays of communication resources of a system. This flexibility ...
Josep Carmona, Jorge Júlvez, Jordi Cortadel...
MICRO
2009
IEEE
124views Hardware» more  MICRO 2009»
14 years 21 days ago
ZerehCache: armoring cache architectures in high defect density technologies
Aggressive technology scaling to 45nm and below introduces serious reliability challenges to the design of microprocessors. Large SRAM structures used for caches are particularly ...
Amin Ansari, Shantanu Gupta, Shuguang Feng, Scott ...