44 search results - page 3 / 9 » Adaptive SRAM memory for low power and high yield |
ICCAD
2009
IEEE
13 years 3 months ago
2009
IEEE
SRAM cell design is driven by the need to satisfy static noise margin, write margin and read current margin (RCM) over all cells in the array in an energy-efficient manner. These ...
CF
2011
ACM
12 years 5 months ago
2011
ACM
Ubiquitous computing has become a very popular paradigm. The most suitable technological solution for those systems consists of using hybrid processors able to operate at high vol...
TVLSI
2008
13 years 5 months ago
2008
-- Aggressive CMOS scaling results in low threshold voltage and thin oxide thickness for transistors manufactured in deep submicron regime. As a result, reducing the subthreshold a...
CODES
2004
IEEE
13 years 9 months ago
2004
IEEE
The high transistor density afforded by modern VLSI processes have enabled the design of embedded processors that use clustered execution units to deliver high levels of performan...
ISLPED
2009
ACM
14 years 7 days ago
2009
ACM
Extreme technology integration in the sub-micron regime comes with a rapid rise in heat dissipation and power density for modern processors. Dynamic voltage scaling is a widely us...