17 search results - page 2 / 4 » Modeling of PMOS NBTI Effect Considering Temperature Variati... |
DATE
2009
IEEE
14 years 1 days ago
2009
IEEE
NBTI (Negative Bias Temperature Instability) has emerged as the dominant PMOS device failure mechanism for sub100nm VLSI designs. There is little research to quantify its impact o...
DATE
2009
IEEE
14 years 1 days ago
2009
IEEE
Negative Bias Temperature Instability (NBTI), a PMOS aging phenomenon causing significant loss on circuit performance and lifetime, has become a critical challenge for temporal re...
ISQED
2010
IEEE
14 years 4 days ago
2010
IEEE
With the CMOS transistors being scaled to sub 45nm and lower, Negative Bias Temperature Instability (NBTI) has become a major concern due to its impact on PMOS transistor aging pr...
ISQED
2006
IEEE
13 years 11 months ago
2006
IEEE
— Negative Bias Temperature Instability (NBTI) has the potential to become one of the main show-stoppers of circuit reliability in nanometer scale devices due to its deleterious ...
DATE
2010
IEEE
13 years 10 months ago
2010
IEEE
Abstract—Negative bias temperature instability (NBTI) significantly affects nanoscale integrated circuit performance and reliability. The degradation in threshold voltage (Vth) d...