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GLVLSI
2005
IEEE
125views VLSI» more  GLVLSI 2005»
13 years 10 months ago
Low-power circuits using dynamic threshold devices
We present simulations for ultra-thin body, fully-depleted, double-gate (DG) silicon-on-insulator (SOI) devices that can be readily optimized for both static power loss and perfor...
Paul Beckett
ASPDAC
2007
ACM
95views Hardware» more  ASPDAC 2007»
13 years 9 months ago
Simultaneous Control of Subthreshold and Gate Leakage Current in Nanometer-Scale CMOS Circuits
Power gating has been widely used to reduce subthreshold leakage. However, its efficiency degrades very fast with technology scaling due to the gate leakage of circuits specific t...
Youngsoo Shin, Sewan Heo, Hyung-Ock Kim, Jung Yun ...
ISQED
2007
IEEE
136views Hardware» more  ISQED 2007»
13 years 11 months ago
Strain Silicon Optimization for Memory and Logic in Nano-Scale CMOS
Straining of silicon improves mobility of carriers resulting in speed enhancement for transistors in CMOS technology. Traditionally, silicon straining is applied in a similar ad-h...
Rajani Kuchipudi, Hamid Mahmoodi
TIM
2010
294views Education» more  TIM 2010»
12 years 11 months ago
Standby Leakage Power Reduction Technique for Nanoscale CMOS VLSI Systems
In this paper, a novel low-power design technique is proposed to minimize the standby leakage power in nanoscale CMOS very large scale integration (VLSI) systems by generating the ...
HeungJun Jeon, Yong-Bin Kim, Minsu Choi
ARVLSI
2001
IEEE
305views VLSI» more  ARVLSI 2001»
13 years 8 months ago
Logic Design Considerations for 0.5-Volt CMOS
As the operating supply voltage for commercial CMOS devices falls below 2 V, research activities are underway to develop CMOS integrated circuits that can operate at supply voltag...
K. Joseph Hass, Jack Venbrux, Prakash Bhatia