Device scaling such as reduced oxide thickness and high electric field has given rise to various reliability concerns. One such growing issue of concern is the degradation of PMOS...
Krishnan Ramakrishnan, S. Suresh, Narayanan Vijayk...
With continuous scaling of transistors in each technology generation, NBTI and Process Variation (PV) have become very important silicon reliability problems for the microprocesso...
Taniya Siddiqua, Sudhanva Gurumurthi, Mircea R. St...
NBTI (Negative Bias Temperature Instability) has emerged as the dominant failure mechanism for PMOS in nanometer IC designs. However, its impact on one of the most important compo...
Abstract—Negative bias temperature instability (NBTI) significantly affects nanoscale integrated circuit performance and reliability. The degradation in threshold voltage (Vth) d...
NBTI (Negative Bias Temperature Instability) has emerged as the dominant PMOS device failure mechanism for sub100nm VLSI designs. There is little research to quantify its impact o...