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VLSID
2006
IEEE
169views VLSI» more  VLSID 2006»
13 years 10 months ago
A Low Leakage and SNM Free SRAM Cell Design in Deep Sub Micron CMOS Technology
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
Sanjeev K. Jain, Pankaj Agarwal
GLVLSI
2003
IEEE
185views VLSI» more  GLVLSI 2003»
13 years 10 months ago
Noise tolerant low voltage XOR-XNOR for fast arithmetic
With scaling down to deep submicron and nanometer technologies, noise immunity is becoming a metric of the same importance as power, speed, and area. Smaller feature sizes, low vo...
Mohamed A. Elgamel, Sumeer Goel, Magdy A. Bayoumi
DAC
2005
ACM
13 years 6 months ago
Total power reduction in CMOS circuits via gate sizing and multiple threshold voltages
Minimizing power consumption is one of the most important objectives in IC design. Resizing gates and assigning different Vt’s are common ways to meet power and timing budgets. ...
Feng Gao, John P. Hayes
ISLPED
2009
ACM
168views Hardware» more  ISLPED 2009»
13 years 11 months ago
Low power circuit design based on heterojunction tunneling transistors (HETTs)
The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low ...
Daeyeon Kim, Yoonmyung Lee, Jin Cai, Isaac Lauer, ...
ISQED
2008
IEEE
150views Hardware» more  ISQED 2008»
13 years 11 months ago
Fundamental Data Retention Limits in SRAM Standby Experimental Results
SRAM leakage power dominates the total power of low duty-cycle applications, e.g., sensor nodes. Accordingly, leakage power reduction during data-retention in SRAM standby is ofte...
Animesh Kumar, Huifang Qin, Prakash Ishwar, Jan M....