DATE
2004
IEEE
13 years 8 months ago
2004
IEEE
This paper compares the effectiveness of statepreserving and non-state-preserving techniques for leakage control in caches by comparing drowsy cache and gated-V
ASPDAC
2007
ACM
13 years 8 months ago
2007
ACM
Power gating has been widely used to reduce subthreshold leakage. However, its efficiency degrades very fast with technology scaling due to the gate leakage of circuits specific t...
ASPDAC
2005
ACM
13 years 10 months ago
2005
ACM
－ In today’s power/ground(P/G) network design, on-chip decoupling capacitors(decaps) are usually made of MOS transistors with source and drain connected together. The gate leak...
ASPDAC
2006
ACM
13 years 10 months ago
2006
ACM
— Power gating is widely accepted as an efficient way to suppress subthreshold leakage current. Yet, it suffers from gate leakage current, which grows very fast with scaling dow...
VLSID
2006
IEEE
13 years 10 months ago
2006
IEEE
As the IC process technology scales, the oxide thickness and operating voltage continues to decrease. The gate oxide thickness in recent and future IC process technology has appro...
ISQED
2006
IEEE
13 years 11 months ago
2006
IEEE
As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher perm...
DATE
2006
IEEE
13 years 11 months ago
2006
IEEE
For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorith...
ISQED
2008
IEEE
13 years 11 months ago
2008
IEEE
In this paper dual-K (DKCMOS) technology is proposed as a method for gate leakage power reduction. An integer linear programming (ILP) based algorithm is proposed for its optimiza...
ISLPED
2009
ACM
13 years 11 months ago
2009
ACM
In this paper, we observe that minimum energy Emin of subthreshold logic dramatically increases when reaching 45 nm node. We demonstrate by circuit simulation and analytical model...
VLSID
2006
IEEE
14 years 5 months ago
2006
IEEE
For a nanoCMOS of sub-65nm technology, where the gate oxide (SiO2) thickness is very low, the gate leakage is one of the major components of power dissipation. In this paper, we pr...